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500Um To 625Um GaAs Based Epi Wafer Polished Grade mechanical grade

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HENAN ZG INDUSTRIAL PRODUCTS CO.,LTD

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500Um To 625Um GaAs Based Epi Wafer Polished Grade mechanical grade

Brand Name : ZG

Model Number : MS

Certification : CE

Place of Origin : CHINA

MOQ : 1 piece

Price : USD10/piece

Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram

Supply Ability : 10000 pieces per month

Delivery Time : 3 working days

Packaging Details : Strong wooden box for Global shipping

Application : microelectronics , optoelectronics and RF Microwave

Diameter : Ø 3" / Ø 4" GaAs wafer

Thickness : 500 um ~ 625 um

Grade : Epi polished grade / mechanical grade

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GaAs Based Epi Wafer

We provides MBE / MOCVD epitaxial growth of custom structure on GaAs substrate for microelectronics , optoelectronics and RF Microwave applications , in diameter Ø 3" to Ø 4” . With our extensive MOCVD experience , we can grow binary alloy ( LT-GaAs , AlAs ) or ternary alloy ( AlGaAs , InGaAs ,GaAsP , InGaP ) on GaAs substrate , singel layer or multiple-layer superlattice structures with superior crystalline quality to meet a variety of device needs . Our highly skilled experts can work with you to design and optimize your GaAs epi layer structure . Please contact us for more product information or discuss your epi layer structure .

GaAs Based Epi Wafer Capability

Our reactors are configured for a variety of material systems and process conditions. We can provide custom epitaxy for a variety of device applications ranging from LEDs to HEMTs .

Material Capability	Substrate	Wafer Size
GaAs/GaAs	GaAs wafer	Up to 4 inch
LT-GaAs/GaAs	GaAs wafer	Up to 4 inch
AlAs/GaAs	GaAs wafer	Up to 4 inch
InAs/GaAs	GaAs wafer	Up to 4 inch
AlGaAs/GaAs	GaAs wafer	Up to 4 inch
InGaAs/GaAs	GaAs wafer	Up to 4 inch
InGaP/GaAs	GaAs wafer	Up to 4 inch
GaAsP/GaAs	GaAs wafer	Up to 4 inch

Optoelectronic applications:

Photodetectors, VCSELs, laser diodes, LEDs, SOAs, Waveguides.

Electronic applications:

FETs, HBTs, HEMTs, diodes, Microwave devices.

Epi Layer Structure ( HEMT / HBT )

Growth	MOCVD
Dopant source	P type / Be , N type / Si
Cap layer	i-GaAs layer
Active layer	n-AlGaAs layer
Space layer	i-AlGaAs layer
Buffer layer	i-GaAs layer
Substrate	Ø 3" / Ø 4" GaAs wafer

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